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Si4404DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
6000
0.00 8
5000
C iss
V GS = 4.5 V
4000
0.006
3000
V GS = 10 V
0.004
2000
C oss
0.002
1000
0.000
0
C rss
0
10
20
30
40
50
60
0
6
12
1 8
24
30
10
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current
1. 8
V DS - Drain-to-So u rce V oltage ( V )
Capacitance
8
V DS = 15 V
I D = 23 A
1.6
V GS = 10 V
I D = 23 A
1.4
6
1.2
4
1.0
2
0
0. 8
0.6
0
20
40
60
8 0
- 50
- 25
0
25
50
75
100
125
150
60
Q g - Total Gate Charge (nC)
Gate Charge
0.010
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
0.00 8
T J = 150 °C
10
1
T J = 25 °C
0.006
0.004
0.002
0.000
I D = 23 A
0.00
0.2
0.4
0.6
0. 8
1.0
1.2
0
2
4
6
8
10
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
Document Number: 71247
S09-0228-Rev. H, 09-Feb-09
V GS - Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
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3
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